Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN

Published in Journal of Physics: Condensed Matter, 2004

Recommended citation: J.M. Vail, D. Schindel, A. Yang, O. Penner, R. Pandey, H. Jiang, M.A. Blanco, A. Costales, Q.C. Qiu, Y. Xu (2004) "Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN" Journal of Physics: Condensed Matter. 16(20)

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